| Part Number: | RN1131MFV |
| Product Name: | RN1131MFV Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | RN1131MFV |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 0.15W VESM |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 100k |
| Resistor - Emitter Base (R2) (Ohms): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | - |
| Power - Max: | 150mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | VESM |
Part Number
Brand
D/C
Qty
RN1131MFV(TPL3) TOSHIBA/ 2022
TOSHIBA/
2022
59000
USD 0
RN1131MFV TOSHIBA/ 2022
TOSHIBA/
2022
50837
USD 0
RN1131MFV(TPL3) TOSHIBA
TOSHIBA
62198
USD 0
RN1131MFV(TL3,T) TOSHIBA/
TOSHIBA/
1142400
USD 0
RN1131MFV(TL3 TOSHIBA/ 22+
TOSHIBA/
22+
2908121
USD 0
RN1131MFV(TPL3) TOSHIBA/ 2022
TOSHIBA/
2022
59000
USD 0
RN1131MFV TOSHIBA/ 2022
TOSHIBA/
2022
50837
USD 0
RN1131MFV(TPL3) TOSHIBA
TOSHIBA
62198
USD 0
RN1131MFV(TL3,T) TOSHIBA/
TOSHIBA/
1142400
USD 0
RN1131MFV(TL3 TOSHIBA/ 22+
TOSHIBA/
22+
2908121
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
