| Part Number: | RN1113ACT |
| Product Name: | RN1113ACT Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | RN1113ACT |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 0.1W CST3 |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 47k |
| Resistor - Emitter Base (R2) (Ohms): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | - |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
Part Number
Brand
D/C
Qty
RN1113ACT TOSHIBA 14+
TOSHIBA
14+
10000
USD 0
RN1113ACT
20
USD 0
RN1113ACT TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1113ACT LT 20+
LT
20+
960
USD 0
RN1113ACT(TPL3)
20
USD 0
RN1113ACT TOSHIBA 14+
TOSHIBA
14+
10000
USD 0
RN1113ACT
20
USD 0
RN1113ACT TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1113ACT LT 20+
LT
20+
960
USD 0
RN1113ACT(TPL3)
20
USD 0
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