Part Number: | RN1113 |
Product Name: | RN1113 Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN1113 |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS NPN 0.1W SSM |
Series: | - |
Packaging: | Tape & Reel (TR) |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 47k |
Resistor - Emitter Base (R2) (Ohms): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
Part Number
Brand
D/C
Qty
RN1113(T5L,F,T) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
14705
USD 0
RN1113 T5L,F,T TOSHIBA/ 2022
TOSHIBA/
2022
17000
USD 0
RN1113 T5L TOSHIBA/ 2022
TOSHIBA/
2022
17000
USD 0
RN1113 TOSHIBA/ 2022
TOSHIBA/
2022
14515
USD 0
RN1113 T5L,F,T TOSHIBA
TOSHIBA
6000
USD 0
RN1113(T5L,F,T) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
14705
USD 0
RN1113 T5L,F,T TOSHIBA/ 2022
TOSHIBA/
2022
17000
USD 0
RN1113 T5L TOSHIBA/ 2022
TOSHIBA/
2022
17000
USD 0
RN1113 TOSHIBA/ 2022
TOSHIBA/
2022
14515
USD 0
RN1113 T5L,F,T TOSHIBA
TOSHIBA
6000
USD 0