| Part Number: | RN1110ACT |
| Product Name: | RN1110ACT Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | RN1110ACT |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 0.1W CST3 |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 47k |
| Resistor - Emitter Base (R2) (Ohms): | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Frequency - Transition: | - |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
Part Number
Brand
D/C
Qty
RN1110ACT(TPL3) TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1110ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN1110ACT(TPL3) TOSHIBA 22+
TOSHIBA
22+
35800
USD 0
RN1110ACT(TPL3) Toshiba Semiconductor and Storage 19+
Toshiba Semiconductor and Storage
19+
3038
USD 0
RN1110ACT(TPL3) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
RN1110ACT(TPL3) TOSHIBA 21+
TOSHIBA
21+
8000
USD 0
RN1110ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN1110ACT(TPL3) TOSHIBA 22+
TOSHIBA
22+
35800
USD 0
RN1110ACT(TPL3) Toshiba Semiconductor and Storage 19+
Toshiba Semiconductor and Storage
19+
3038
USD 0
RN1110ACT(TPL3) Toshiba Semiconductor and Storage 21+
Toshiba Semiconductor and Storage
21+
81630
USD 0
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