| Part Number: | RN1108 |
| Product Name: | RN1108 Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | RN1108 |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 0.1W SSM |
| Series: | - |
| Packaging: | Cut Tape (CT) |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 22k |
| Resistor - Emitter Base (R2) (Ohms): | 47k |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 250MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SSM |
Part Number
Brand
D/C
Qty
RN1108 /YQ 2022
/YQ
2022
41000
USD 0
RN1108 TOSHIBA/ 2022
TOSHIBA/
2022
368000
USD 0
RN1108(TE85L,F) TOSHIBA 1829+
TOSHIBA
1829+
1964
USD 0
RN1108 20+
20+
3000
USD 0
RN1108 YQ 21+
YQ
21+
102249
USD 0
RN1108 /YQ 2022
/YQ
2022
41000
USD 0
RN1108 TOSHIBA/ 2022
TOSHIBA/
2022
368000
USD 0
RN1108(TE85L,F) TOSHIBA 1829+
TOSHIBA
1829+
1964
USD 0
RN1108 20+
20+
3000
USD 0
RN1108 YQ 21+
YQ
21+
102249
USD 0
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