Part Number: | RN1106ACT |
Product Name: | RN1106ACT Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | RN1106ACT |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS PREBIAS NPN 0.1W CST3 |
Series: | - |
Packaging: | |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 4.7k |
Resistor - Emitter Base (R2) (Ohms): | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | - |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | CST3 |
Part Number
Brand
D/C
Qty
RN1106ACT TOSHIBA 20+
TOSHIBA
20+
100
USD 0
RN1106ACT TOSHIBA 20+
TOSHIBA
20+
7660
USD 0
RN1106ACT TOSHIBA 21+
TOSHIBA
21+
2000
USD 0
RN1106ACT TOSHIBA 20+
TOSHIBA
20+
100
USD 0
RN1106ACT TOSHIBA 20+
TOSHIBA
20+
100
USD 0
RN1106ACT TOSHIBA 20+
TOSHIBA
20+
7660
USD 0
RN1106ACT TOSHIBA 21+
TOSHIBA
21+
2000
USD 0
RN1106ACT TOSHIBA 20+
TOSHIBA
20+
100
USD 0