| Part Number: | RN1103MFV |
| Product Name: | RN1103MFV Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | RN1103MFV |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 150MW VESM |
| Series: | - |
| Packaging: | Tape & Reel (TR) |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 22k |
| Resistor - Emitter Base (R2) (Ohms): | 22k |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | - |
| Power - Max: | 150mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | VESM |
Part Number
Brand
D/C
Qty
RN1103MFV(TPL3)
TOSHIBA
2021
TOSHIBA
2021
7975
USD 0
RN1103MFV(TL3T) TOSHIBA 2022
TOSHIBA
2022
16000
USD 0
RN1103MFV TOSHIBA/ 2022
TOSHIBA/
2022
18287
USD 0
RN1103MFV TL3T TOSHIBA 13+
TOSHIBA
13+
5000
USD 0
RN1103MFV TOSHIBA 12+
TOSHIBA
12+
2311
USD 0
RN1103MFV(TPL3)
TOSHIBA
2021
TOSHIBA
2021
7975
USD 0
RN1103MFV(TL3T) TOSHIBA 2022
TOSHIBA
2022
16000
USD 0
RN1103MFV TOSHIBA/ 2022
TOSHIBA/
2022
18287
USD 0
RN1103MFV TL3T TOSHIBA 13+
TOSHIBA
13+
5000
USD 0
RN1103MFV TOSHIBA 12+
TOSHIBA
12+
2311
USD 0
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