| Part Number: | PSMN102200Y115 |
| Product Name: | PSMN102200Y115 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | PSMN102200Y115 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Nexperia USA Inc. |
| Description: | MOSFET N-CH 200V 21.5A LFPAK |
| Series: | TrenchMOS |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 21.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 30.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1568pF @ 30V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 113W (Tc) |
| Rds On (Max) @ Id, Vgs: | 102 mOhm @ 12A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Package / Case: | SC-100, SOT-669 |
Part Number
Brand
D/C
Qty
PSMN102-200Y115 NXP/ 16+
NXP/
16+
26
USD 0
PSMN102-200Y,115
Nexperia USA Inc.
Nexperia USA Inc.
15000
USD 0
PSMN102-200Y115 NXP/ 21+
NXP/
21+
1120
USD 0
PSMN102-200Y115 NXP
NXP
36160
USD 0
PSMN102-200Y115 NXP/ 16+
NXP/
16+
26
USD 0
PSMN102-200Y,115
Nexperia USA Inc.
Nexperia USA Inc.
15000
USD 0
PSMN102-200Y115 NXP/ 21+
NXP/
21+
1120
USD 0
PSMN102-200Y115 NXP
NXP
36160
USD 0
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