Part Number: | PMDT290UNE115 |
Product Name: | PMDT290UNE115 Transistors - FETs, MOSFETs - Arrays |
Merchant-Specific Identifier: | PMDT290UNE115 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
Brand: | Nexperia USA Inc. |
Description: | MOSFET 2N-CH 20V 0.8A SOT666 |
Series: | Automotive, AEC-Q101, TrenchMOS |
Packaging: | 2 N-Channel (Dual) |
FET Type: | |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 800mA |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 10V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
PMDT290UNE,115 Nexperia 2021+ 0
Nexperia
2021+
18000
USD 0
Part Number
Brand
D/C
Qty
PMDT290UNE,115 NEXPERIA 2303
NEXPERIA
2303
40000
USD 0
PMDT290UNE,115
180
USD 0
PMDT290UNE,115 NEXP 2022
NEXP
2022
23350
USD 0
PMDT290UNE,115 Nexperia USA Inc.
Nexperia USA Inc.
12000
USD 0
PMDT290UNE,115 NEXPERIA 2303
NEXPERIA
2303
40000
USD 0
PMDT290UNE,115
180
USD 0
PMDT290UNE,115 NEXP 2022
NEXP
2022
23350
USD 0
PMDT290UNE,115 Nexperia USA Inc.
Nexperia USA Inc.
12000
USD 0