| Part Number: | PMDPB28UN115 |
| Product Name: | PMDPB28UN115 Transistors - FETs, MOSFETs - Arrays |
| Merchant-Specific Identifier: | PMDPB28UN115 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
| Brand: | NXP USA Inc. |
| Description: | MOSFET 2N-CH 20V 4.6A HUSON6 |
| Series: | - |
| Packaging: | |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A |
| Rds On (Max) @ Id, Vgs: | 37 mOhm @ 4.6A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 265pF @ 10V |
| Power - Max: | 510mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-UDFN Exposed Pad |
| Supplier Device Package: | DFN2020-6 |
Part Number
Brand
D/C
Qty
PMDPB28UN,115 NEXP 2022
NEXP
2022
23500
USD 0
PMDPB28UN,115 NEXP 20+
NEXP
20+
100000
USD 0
PMDPB28UN,115 NXP 2022
NXP
2022
389600
USD 0
PMDPB28UN115 NXP/
NXP/
11594
USD 0
PMDPB28UN,115 NXP 2022+
NXP
2022+
12500
USD 0
PMDPB28UN,115 NEXP 2022
NEXP
2022
23500
USD 0
PMDPB28UN,115 NEXP 20+
NEXP
20+
100000
USD 0
PMDPB28UN,115 NXP 2022
NXP
2022
389600
USD 0
PMDPB28UN115 NXP/
NXP/
11594
USD 0
PMDPB28UN,115 NXP 2022+
NXP
2022+
12500
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
