Part Number: | PHD18NQ10T118 |
Product Name: | PHD18NQ10T118 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | PHD18NQ10T118 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | NXP USA Inc. |
Description: | MOSFET N-CH 100V 18A DPAK |
Series: | TrenchMOS |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 633pF @ 25V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 79W (Tc) |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 9A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
PHD18NQ10T,118 NXP/
NXP/
15000
USD 0
PHD18NQ10T,118
6620
USD 0
PHD18NQ10T,118 22+
22+
1000
USD 0
PHD18NQ10T,118 NXP USA Inc.
NXP USA Inc.
1000
USD 0
PHD18NQ10T,118 NXPUSAInc 22+
NXPUSAInc
22+
35800
USD 0
PHD18NQ10T,118 NXP/
NXP/
15000
USD 0
PHD18NQ10T,118
6620
USD 0
PHD18NQ10T,118 22+
22+
1000
USD 0
PHD18NQ10T,118 NXP USA Inc.
NXP USA Inc.
1000
USD 0
PHD18NQ10T,118 NXPUSAInc 22+
NXPUSAInc
22+
35800
USD 0