| Part Number: | PDTB113ES126 |
| Product Name: | PDTB113ES126 Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | PDTB113ES126 |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | NXP USA Inc. |
| Description: | TRANS PREBIAS PNP 500MW TO92-3 |
| Series: | - |
| Packaging: | Tape & Box (TB) |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 1k |
| Resistor - Emitter Base (R2) (Ohms): | 1k |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 33 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | - |
| Power - Max: | 500mW |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
Part Number
Brand
D/C
Qty
PDTB113ES,126 NXP USA Inc. 22+
NXP USA Inc.
22+
32000
USD 0
PDTB113ES,126 NXP USA Inc.
NXP USA Inc.
8000
USD 0
PDTB113ES,126 NXP USA Inc. 22+
NXP USA Inc.
22+
32000
USD 0
PDTB113ES,126 NXP USA Inc. 18+
NXP USA Inc.
18+
6460
USD 0
PDTB113ES,126 NXP USA Inc. 21+
NXP USA Inc.
21+
1000
USD 0
PDTB113ES,126 NXP USA Inc. 22+
NXP USA Inc.
22+
32000
USD 0
PDTB113ES,126 NXP USA Inc.
NXP USA Inc.
8000
USD 0
PDTB113ES,126 NXP USA Inc. 22+
NXP USA Inc.
22+
32000
USD 0
PDTB113ES,126 NXP USA Inc. 18+
NXP USA Inc.
18+
6460
USD 0
PDTB113ES,126 NXP USA Inc. 21+
NXP USA Inc.
21+
1000
USD 0
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