Part Number: | PDTA123EM315 |
Product Name: | PDTA123EM315 Transistors - Bipolar (BJT) - Single, Pre-Biased |
Merchant-Specific Identifier: | PDTA123EM315 |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand: | Nexperia USA Inc. |
Description: | TRANS PREBIAS PNP 250MW SOT883 |
Series: | - |
Packaging: | Cut Tape (CT) |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1) (Ohms): | 2.2k |
Resistor - Emitter Base (R2) (Ohms): | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | - |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | DFN1006-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
PDTA123EM,315 22+23+ 0
22+23+
1185
USD 0
Part Number
Brand
D/C
Qty
PDTA123EM,315 NXP USA Inc.
NXP USA Inc.
300000
USD 0
PDTA123EM,315 N/A
N/A
5000
USD 0
PDTA123EM315 Nexperia 2022+
Nexperia
2022+
14000
USD 0
PDTA123EM,315 NXP 21+
NXP
21+
20000
USD 0
PDTA123EM,315 NXP USA Inc.
NXP USA Inc.
300000
USD 0
PDTA123EM,315 N/A
N/A
5000
USD 0
PDTA123EM315 Nexperia 2022+
Nexperia
2022+
14000
USD 0
PDTA123EM,315 NXP 21+
NXP
21+
20000
USD 0