Part Number: | NE58219T1A |
Product Name: | NE58219T1A Transistors - Bipolar (BJT) - RF |
Merchant-Specific Identifier: | NE58219T1A |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF |
Brand: | CEL |
Description: | TRANSISTOR BIPOLAR .9GHZ 3-SMINI |
Series: | - |
Packaging: | |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 5GHz |
Noise Figure (dB Typ @ f): | - |
Gain: | - |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 5V |
Current - Collector (Ic) (Max): | 60mA |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | 3-SuperMiniMold (19) |
Part Number
Brand
D/C
Qty
NE58219-T1-A original new 21+
original new
21+
6036
USD 0
NE58219-T1-A
332
USD 0
NE58219-T1-A Renesas 21+
Renesas
21+
1767
USD 0
NE58219-T1-A RENESAS/
RENESAS/
674000
USD 0
NE58219-T1-A 22+
22+
7000
USD 0
NE58219-T1-A original new 21+
original new
21+
6036
USD 0
NE58219-T1-A
332
USD 0
NE58219-T1-A Renesas 21+
Renesas
21+
1767
USD 0
NE58219-T1-A RENESAS/
RENESAS/
674000
USD 0
NE58219-T1-A 22+
22+
7000
USD 0