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Home > Part Number Index > Index 84 > Product (Page: 5498) > MJD1121G

What is MJD1121G?

Part Number: MJD1121G
Product Name: MJD1121G Transistors - Bipolar (BJT) - Single
Merchant-Specific Identifier: MJD1121G
Category: Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
Brand: ON Semiconductor
Description: TRANS NPN DARL 100V 2A IPAK
Series: -
Packaging: Tube
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Power - Max: 1.75W
Frequency - Transition: 25MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-Pak
Rated 5/5 based on 12 customer reviews
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single

MJD1121G

This is a cached page collected on 7/13/2024 4:07:42 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 7/13/2024 4:07:42 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>

MJD1121G

1 - 10 of 10 Suppliers
Company

Part Number

Brand

D/C

Qty

MJD112-1G onsemi

onsemi 

23/22+

5000
USD 0

MJD112-1G ON/

ON/ 

22+

13376
USD 0

MJD112-1G onsemi

onsemi 

23/22+

5000
USD 0

MJD112-1G ON/

ON/ 

22+

13376
USD 0

This is a cached page collected on 7/13/2024 4:07:42 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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