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Home > Part Number Index > Index 64 > Product (Page: 4902) > IXTT6N120

What is IXTT6N120?

Part Number: IXTT6N120
Product Name: IXTT6N120 Transistors - FETs, MOSFETs - Single
Merchant-Specific Identifier: IXTT6N120
Category: Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Brand: IXYS
Description: MOSFET N-CH 1200V 6A TO-268
Series: -
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA
Rated 5/5 based on 15 customer reviews
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

IXTT6N120

This is a cached page collected on 7/7/2024 4:07:51 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 7/7/2024 4:07:51 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>

IXTT6N120

1 - 10 of 10 Suppliers
Company

Part Number

Brand

D/C

Qty

IXTT6N120 IXYS

IXYS 

2021+

5000
USD 0

IXTT6N120 IXYS

IXYS 

2021+

5000
USD 0

This is a cached page collected on 7/7/2024 4:07:51 PM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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