| Part Number: | IXTP1R6N50D2 |
| Product Name: | IXTP1R6N50D2 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IXTP1R6N50D2 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | IXYS |
| Description: | MOSFET N-CH 500V 1.6A TO220AB |
| Series: | - |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 500V |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 23.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 645pF @ 25V |
| Vgs (Max): | ±20V |
| FET Feature: | Depletion Mode |
| Power Dissipation (Max): | 100W (Tc) |
| Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 800mA, 0V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
Part Number
Brand
D/C
Qty
IXTP1R6N50D2 IXYS/
IXYS/
22300
USD 0
IXTP1R6N50D2 VBsemi 21+
VBsemi
21+
10026
USD 0
IXTP1R6N50D2 VBsemi 21+
VBsemi
21+
10026
USD 0
IXTP1R6N50D2 IXYS 24/23+
IXYS
24/23+
11001
USD 0
IXTP1R6N50D2 VBsemi 21+
VBsemi
21+
10026
USD 0
IXTP1R6N50D2 IXYS/
IXYS/
22300
USD 0
IXTP1R6N50D2 VBsemi 21+
VBsemi
21+
10026
USD 0
IXTP1R6N50D2 VBsemi 21+
VBsemi
21+
10026
USD 0
IXTP1R6N50D2 IXYS 24/23+
IXYS
24/23+
11001
USD 0
IXTP1R6N50D2 VBsemi 21+
VBsemi
21+
10026
USD 0
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