| Part Number: | IXFT58N20Q |
| Product Name: | IXFT58N20Q Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IXFT58N20Q |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | IXYS |
| Description: | MOSFET N-CH 200V 58A TO-268 |
| Series: | HiPerFET |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 300W (Tc) |
| Rds On (Max) @ Id, Vgs: | 40 mOhm @ 29A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-268 |
| Package / Case: | TO-268-3, Dé²Pak (2 Leads + Tab), TO-268AA |
Part Number
Brand
D/C
Qty
IXFT58N20Q IXYS 10+
IXYS
10+
4100
USD 0
IXFT58N20Q IXYS 20+
IXYS
20+
6036
USD 0
IXFT58N20Q IXYS 2018+
IXYS
2018+
22000
USD 0
IXFT58N20Q IXYS 2021+
IXYS
2021+
5000
USD 0
IXFT58N20Q IXYS 10+
IXYS
10+
4100
USD 0
IXFT58N20Q IXYS 20+
IXYS
20+
6036
USD 0
IXFT58N20Q IXYS 2018+
IXYS
2018+
22000
USD 0
IXFT58N20Q IXYS 2021+
IXYS
2021+
5000
USD 0
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