| Part Number: | IRL6372PBF |
| Product Name: | IRL6372PBF Transistors - FETs, MOSFETs - Arrays |
| Merchant-Specific Identifier: | IRL6372PBF |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
| Brand: | Infineon Technologies |
| Description: | MOSFET 2N-CH 30V 8.1A 8SO |
| Series: | HEXFET |
| Packaging: | Tube |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 8.1A |
| Rds On (Max) @ Id, Vgs: | 17.9 mOhm @ 8.1A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.1V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1020pF @ 25V |
| Power - Max: | 2W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
Part Number
Brand
D/C
Qty
IRL6372PBF IR 16+
IR
16+
13337
USD 0
IRL6372PBF IR 21+
IR
21+
5000
USD 0
IRL6372PBF IR
IR
180
USD 0
IRL6372PBF IR 16+
IR
16+
13337
USD 0
IRL6372PBF IR 21+
IR
21+
5000
USD 0
IRL6372PBF IR
IR
180
USD 0
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