Part Number: | IRFBE30S |
Product Name: | IRFBE30S Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IRFBE30S |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Vishay Siliconix |
Description: | MOSFET N-CH 800V 4.1A D2PAK |
Series: | - |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 2.5A, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
IRFBE30S/ SiHFBE30S VISHAY/
VISHAY/
38000
USD 0
IRFBE30S IR
IR
29088
USD 0
IRFBE30S IR
IR
30000
USD 0
IRFBE30S IR 22+
IR
22+
3000
USD 0
IRFBE30S IR 20+
IR
20+
100000
USD 0
IRFBE30S/ SiHFBE30S VISHAY/
VISHAY/
38000
USD 0
IRFBE30S IR
IR
29088
USD 0
IRFBE30S IR
IR
30000
USD 0
IRFBE30S IR 22+
IR
22+
3000
USD 0
IRFBE30S IR 20+
IR
20+
100000
USD 0