Part Number: | IRFB59N10DPBF |
Product Name: | IRFB59N10DPBF Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IRFB59N10DPBF |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 100V 59A TO-220AB |
Series: | HEXFET |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 114nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2450pF @ 25V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 35.4A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Part Number
Brand
D/C
Qty
IRFB59N10DPBF INFINEON 22+
INFINEON
22+
32000
USD 0
IRFB59N10DPBF International Rectifier
International Rectifier
1540
USD 0
IRFB59N10DPBF VISHAY 2021+
VISHAY
2021+
12000
USD 0
IRFB59N10DPBF IR 17+
IR
17+
6850
USD 0
IRFB59N10DPBF INFINEON 22+
INFINEON
22+
32000
USD 0
IRFB59N10DPBF International Rectifier
International Rectifier
1540
USD 0
IRFB59N10DPBF VISHAY 2021+
VISHAY
2021+
12000
USD 0
IRFB59N10DPBF IR 17+
IR
17+
6850
USD 0