| Part Number: | IRF8306MTR1PBF |
| Product Name: | IRF8306MTR1PBF Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IRF8306MTR1PBF |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 30V 23A DIRECTFET |
| Series: | HEXFET |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 23A (Ta), 140A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.35V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4110pF @ 15V |
| Vgs (Max): | - |
| FET Feature: | Schottky Diode (Body) |
| Power Dissipation (Max): | 2.1W (Ta), 75W (Tc) |
| Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 23A, 10V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | DIRECTFET,MX |
| Package / Case: | DirectFET,Isometric MX |
Part Number
Brand
D/C
Qty
IRF8306MTR1PBF ir 23+
ir
23+
100000
USD 0
IRF8306MTR1PBF IR 1152
IR
1152
743
USD 0
IRF8306MTR1PBF INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IRF8306MTR1PBF INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IRF8306MTR1PBF Infineon 2022
Infineon
2022
10000
USD 0
IRF8306MTR1PBF ir 23+
ir
23+
100000
USD 0
IRF8306MTR1PBF IR 1152
IR
1152
743
USD 0
IRF8306MTR1PBF INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IRF8306MTR1PBF INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IRF8306MTR1PBF Infineon 2022
Infineon
2022
10000
USD 0
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