| Part Number: | IPW65R190C7XKSA1 |
| Product Name: | IPW65R190C7XKSA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPW65R190C7XKSA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 650V 20.2A TO247 |
| Series: | CoolMOS,C7 |
| Packaging: | Tube |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 290µA |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 400V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 72W (Tc) |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 5.7A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3 |
| Package / Case: | TO-247-3 |
Part Number
Brand
D/C
Qty
IPW65R190C7XKSA1 24+
24+
12000
USD 0
IPW65R190C7XKSA1
10
USD 0
IPW65R190C7XKSA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPW65R190C7XKSA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPW65R190C7XKSA1 Infineon 2022
Infineon
2022
10000
USD 0
IPW65R190C7XKSA1 24+
24+
12000
USD 0
IPW65R190C7XKSA1
10
USD 0
IPW65R190C7XKSA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPW65R190C7XKSA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPW65R190C7XKSA1 Infineon 2022
Infineon
2022
10000
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
