| Part Number: | IPT60R080G7XTMA1 |
| Product Name: | IPT60R080G7XTMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPT60R080G7XTMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 650V 29A HSOF-8 |
| Series: | CoolMOS,G7 |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 490µA |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1640pF @ 400V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 167W (Tc) |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 9.7A, 10V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-HSOF-8 |
| Package / Case: | 8-PowerSFN |
Part Number
Brand
D/C
Qty
IPT60R080G7XTMA1 Infineon
Infineon
30000
USD 0
IPT60R080G7XTMA1
9800
USD 0
IPT60R080G7XTMA1 INFINEON 2022
INFINEON
2022
346000
USD 0
IPT60R080G7XTMA1 24+
24+
12000
USD 0
IPT60R080G7XTMA1 Infineon 22+
Infineon
22+
5000
USD 0
IPT60R080G7XTMA1 Infineon
Infineon
30000
USD 0
IPT60R080G7XTMA1
9800
USD 0
IPT60R080G7XTMA1 INFINEON 2022
INFINEON
2022
346000
USD 0
IPT60R080G7XTMA1 24+
24+
12000
USD 0
IPT60R080G7XTMA1 Infineon 22+
Infineon
22+
5000
USD 0
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