| Part Number: | IPD65R660CFDAATMA1 |
| Product Name: | IPD65R660CFDAATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD65R660CFDAATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH TO252-3 |
| Series: | Automotive, AEC-Q101, CoolMOS |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4.5V @ 214.55µA |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 543pF @ 100V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 62.5W (Tc) |
| Rds On (Max) @ Id, Vgs: | 660 mOhm @ 3.22A, 10V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
IPD65R660CFDAATMA1 INFINEON 22+
INFINEON
22+
10000
USD 0
IPD65R660CFDAATMA1 Infineon 22+
Infineon
22+
2500
USD 0
IPD65R660CFDAATMA1 TI
TI
1000
USD 0
IPD65R660CFDAATMA1 TI 21+
TI
21+
500
USD 0
IPD65R660CFDAATMA1 INFINEON 23+
INFINEON
23+
360000
USD 0
IPD65R660CFDAATMA1 INFINEON 22+
INFINEON
22+
10000
USD 0
IPD65R660CFDAATMA1 Infineon 22+
Infineon
22+
2500
USD 0
IPD65R660CFDAATMA1 TI
TI
1000
USD 0
IPD65R660CFDAATMA1 TI 21+
TI
21+
500
USD 0
IPD65R660CFDAATMA1 INFINEON 23+
INFINEON
23+
360000
USD 0
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