| Part Number: | IPD65R650CEAUMA1 |
| Product Name: | IPD65R650CEAUMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD65R650CEAUMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 650V 7A TO-252 |
| Series: | CoolMOS,CE |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 3.5V @ 210µA |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 86W (Tc) |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
IPD65R650CEAUMA1 Infineon
Infineon
30000
USD 0
IPD65R650CEAUMA1 Infineon 24+
Infineon
24+
10000
USD 0
IPD65R650CEAUMA1 INFINEON 2022
INFINEON
2022
346000
USD 0
IPD65R650CEAUMA1 INFINEON 18+
INFINEON
18+
5000
USD 0
IPD65R650CEAUMA1 24+
24+
12000
USD 0
IPD65R650CEAUMA1 Infineon
Infineon
30000
USD 0
IPD65R650CEAUMA1 Infineon 24+
Infineon
24+
10000
USD 0
IPD65R650CEAUMA1 INFINEON 2022
INFINEON
2022
346000
USD 0
IPD65R650CEAUMA1 INFINEON 18+
INFINEON
18+
5000
USD 0
IPD65R650CEAUMA1 24+
24+
12000
USD 0
Contact Us
Copyright © 2025 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
