| Part Number: | IPD60R950C6ATMA1 |
| Product Name: | IPD60R950C6ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD60R950C6ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 600V 4.4A TO252 |
| Series: | CoolMOS,C6 |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 600V |
| Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 100V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 37W (Tc) |
| Rds On (Max) @ Id, Vgs: | 950 mOhm @ 1.5A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
IPD60R950C6ATMA1 INFINEON 23+
INFINEON
23+
360000
USD 0
IPD60R950C6ATMA1 Infineon 21+
Infineon
21+
30000
USD 0
IPD60R950C6ATMA1 INFINEON 18+
INFINEON
18+
3744
USD 0
IPD60R950C6ATMA1 6R950C6 TOSHIBA 04+
TOSHIBA
04+
3000
USD 0
IPD60R950C6ATMA1 Infineon 3200
Infineon
3200
21
USD 0
IPD60R950C6ATMA1 INFINEON 23+
INFINEON
23+
360000
USD 0
IPD60R950C6ATMA1 Infineon 21+
Infineon
21+
30000
USD 0
IPD60R950C6ATMA1 INFINEON 18+
INFINEON
18+
3744
USD 0
IPD60R950C6ATMA1 6R950C6 TOSHIBA 04+
TOSHIBA
04+
3000
USD 0
IPD60R950C6ATMA1 Infineon 3200
Infineon
3200
21
USD 0
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