| Part Number: | IPD60R600P7ATMA1 |
| Product Name: | IPD60R600P7ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD60R600P7ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 650V 6A TO252-3 |
| Series: | CoolMOS,P7 |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 363pF @ 400V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 30W (Tc) |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 1.7A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
IPD60R600P7ATMA1 TI
TI
1000
USD 0
IPD60R600P7ATMA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
2500
USD 0
IPD60R600P7ATMA1 INFINEON 23+
INFINEON
23+
360000
USD 0
IPD60R600P7ATMA1 INFINEON 2024
INFINEON
2024
346000
USD 0
IPD60R600P7ATMA1 TI
TI
1000
USD 0
IPD60R600P7ATMA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
2500
USD 0
IPD60R600P7ATMA1 INFINEON 23+
INFINEON
23+
360000
USD 0
IPD60R600P7ATMA1 INFINEON 2024
INFINEON
2024
346000
USD 0
Contact Us
Copyright © 2025 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
