| Part Number: | IPD60N10S4L12ATMA1 |
| Product Name: | IPD60N10S4L12ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD60N10S4L12ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH TO252-3 |
| Series: | Automotive, AEC-Q101, HEXFET |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 2.1V @ 46µA |
| Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3170pF @ 25V |
| Vgs (Max): | ±16V |
| FET Feature: | - |
| Power Dissipation (Max): | 94W (Tc) |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 60A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3-313 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
IPD60N10S4L12ATMA1 Infineon 22+
Infineon
22+
2500
USD 0
IPD60N10S4L12ATMA1 INFINEON 22+
INFINEON
22+
550
USD 0
IPD60N10S4L12ATMA1 Infineon 21+
Infineon
21+
30000
USD 0
IPD60N10S4L12ATMA1 Infineon 22+23+
Infineon
22+23+
3000
USD 0
IPD60N10S4L12ATMA1 INFINEON 2022
INFINEON
2022
398770
USD 0
IPD60N10S4L12ATMA1 Infineon 22+
Infineon
22+
2500
USD 0
IPD60N10S4L12ATMA1 INFINEON 22+
INFINEON
22+
550
USD 0
IPD60N10S4L12ATMA1 Infineon 21+
Infineon
21+
30000
USD 0
IPD60N10S4L12ATMA1 Infineon 22+23+
Infineon
22+23+
3000
USD 0
IPD60N10S4L12ATMA1 INFINEON 2022
INFINEON
2022
398770
USD 0
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