Part Number: | IPD35N10S3L26ATMA1 |
Product Name: | IPD35N10S3L26ATMA1 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IPD35N10S3L26ATMA1 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 100V 35A TO252-3 |
Series: | OptiMOS |
Packaging: | Cut Tape (CT) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 39µA |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 25V |
Vgs (Max): | ±20V |
FET Feature: | - |
Power Dissipation (Max): | 71W (Tc) |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 35A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
IPD35N10S3L26ATMA1
INFINEON
21+
INFINEON
21+
20000
USD 0
IPD35N10S3L26ATMA1
INFINEON
21+
INFINEON
21+
20000
USD 0
IPD35N10S3L26ATMA1 Infineon 22+
Infineon
22+
5000
USD 0
IPD35N10S3L26ATMA1
200
USD 0
IPD35N10S3L26ATMA1 Infineon 22+
Infineon
22+
2500
USD 0
IPD35N10S3L26ATMA1
INFINEON
21+
INFINEON
21+
20000
USD 0
IPD35N10S3L26ATMA1
INFINEON
21+
INFINEON
21+
20000
USD 0
IPD35N10S3L26ATMA1 Infineon 22+
Infineon
22+
5000
USD 0
IPD35N10S3L26ATMA1
200
USD 0
IPD35N10S3L26ATMA1 Infineon 22+
Infineon
22+
2500
USD 0