| Part Number: | IPD25N06S4L30ATMA1 |
| Product Name: | IPD25N06S4L30ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD25N06S4L30ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 60V 25A TO252-3 |
| Series: | OptiMOS |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.2V @ 8µA |
| Gate Charge (Qg) (Max) @ Vgs: | 16.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 25V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 29W (Tc) |
| Rds On (Max) @ Id, Vgs: | 30 mOhm @ 25A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3-11 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
IPD25N06S4L30ATMA1 INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IPD25N06S4L30ATMA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
2500
USD 0
IPD25N06S4L30ATMA1 INFINEON 23+/24+
INFINEON
23+/24+
10200
USD 0
IPD25N06S4L30ATMA1 Infineon Technologies 23+
Infineon Technologies
23+
5000
USD 0
IPD25N06S4L30ATMA1 INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IPD25N06S4L30ATMA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
2500
USD 0
IPD25N06S4L30ATMA1 INFINEON 23+/24+
INFINEON
23+/24+
10200
USD 0
IPD25N06S4L30ATMA1 Infineon Technologies 23+
Infineon Technologies
23+
5000
USD 0
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