| Part Number: | IPD12CN10NGATMA1 |
| Product Name: | IPD12CN10NGATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPD12CN10NGATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 100V 67A TO252-3 |
| Series: | OptiMOS |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Vgs(th) (Max) @ Id: | 4V @ 83µA |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4320pF @ 50V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 125W (Tc) |
| Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 67A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO252-3 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Part Number
Brand
D/C
Qty
IPD12CN10NGATMA1 TI
TI
500
USD 0
IPD12CN10NGATMA1 Infineon 22+
Infineon
22+
2478
USD 0
IPD12CN10NGATMA1 Infineon 21+
Infineon
21+
5412
USD 0
IPD12CN10NGATMA1 INFINEON 19
INFINEON
19
1000
USD 0
IPD12CN10NGATMA1 INFINEON 2022
INFINEON
2022
346000
USD 0
IPD12CN10NGATMA1 TI
TI
500
USD 0
IPD12CN10NGATMA1 Infineon 22+
Infineon
22+
2478
USD 0
IPD12CN10NGATMA1 Infineon 21+
Infineon
21+
5412
USD 0
IPD12CN10NGATMA1 INFINEON 19
INFINEON
19
1000
USD 0
IPD12CN10NGATMA1 INFINEON 2022
INFINEON
2022
346000
USD 0
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