| Part Number: | IPB80N06S2LH5 |
| Product Name: | IPB80N06S2LH5 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPB80N06S2LH5 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 55V 80A TO263-3 |
| Series: | OptiMOS |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 55V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 300W (Tc) |
| Rds On (Max) @ Id, Vgs: | 4.7 mOhm @ 80A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263-3-2 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
IPB80N06S2L-H5 VBsemi 21+
VBsemi
21+
5800
USD 0
IPB80N06S2L-H5 Infineon 21+
Infineon
21+
12000
USD 0
IPB80N06S2L-H5 INFINEON/ 2022
INFINEON/
2022
17050
USD 0
IPB80N06S2L-H5 IFN
IFN
35150
USD 0
IPB80N06S2LH5 INFINEON/
INFINEON/
12000
USD 0
IPB80N06S2L-H5 VBsemi 21+
VBsemi
21+
5800
USD 0
IPB80N06S2L-H5 Infineon 21+
Infineon
21+
12000
USD 0
IPB80N06S2L-H5 INFINEON/ 2022
INFINEON/
2022
17050
USD 0
IPB80N06S2L-H5 IFN
IFN
35150
USD 0
IPB80N06S2LH5 INFINEON/
INFINEON/
12000
USD 0
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