| Part Number: | IPB65R190C6ATMA1 |
| Product Name: | IPB65R190C6ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPB65R190C6ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 650V 20.2A TO263 |
| Series: | CoolMOS |
| Packaging: | |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs: | 73nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1620pF @ 100V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 151W (Tc) |
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 7.3A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
IPB65R190C6ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB65R190C6ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB65R190C6ATMA1 Infineon 23/22+
Infineon
23/22+
5000
USD 0
IPB65R190C6ATMA1 INFINEON 22+
INFINEON
22+
32000
USD 0
IPB65R190C6ATMA1
3000
USD 0
IPB65R190C6ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB65R190C6ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB65R190C6ATMA1 Infineon 23/22+
Infineon
23/22+
5000
USD 0
IPB65R190C6ATMA1 INFINEON 22+
INFINEON
22+
32000
USD 0
IPB65R190C6ATMA1
3000
USD 0
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