| Part Number: | IPB180N04S4LH0ATMA1 |
| Product Name: | IPB180N04S4LH0ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPB180N04S4LH0ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH TO263-7 |
| Series: | Automotive, AEC-Q101, OptiMOS |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.2V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs: | 310nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 24440pF @ 25V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 250W (Tc) |
| Rds On (Max) @ Id, Vgs: | 1 mOhm @ 100A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263-7-3 |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Part Number
Brand
D/C
Qty
IPB180N04S4LH0ATMA1 INFINEON/ 22+
INFINEON/
22+
668000
USD 0
IPB180N04S4LH0ATMA1 INFINEON 2024
INFINEON
2024
346000
USD 0
IPB180N04S4LH0ATMA1 INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IPB180N04S4LH0ATMA1 Infineon 23+/24+
Infineon
23+/24+
20174
USD 0
IPB180N04S4LH0ATMA1 INFINEON/ 22+
INFINEON/
22+
668000
USD 0
IPB180N04S4LH0ATMA1 INFINEON 2024
INFINEON
2024
346000
USD 0
IPB180N04S4LH0ATMA1 INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IPB180N04S4LH0ATMA1 Infineon 23+/24+
Infineon
23+/24+
20174
USD 0
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