Part Number: | IPB048N06LGATMA1 |
Product Name: | IPB048N06LGATMA1 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IPB048N06LGATMA1 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 60V 100A TO-263 |
Series: | OptiMOS |
Packaging: | |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 2V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs: | 225nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 30V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 100A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-2 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
IPB048N06LGATMA1 INFINEON/ 22+
INFINEON/
22+
12001
USD 0
IPB048N06LGATMA1 INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IPB048N06LGATMA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
1000
USD 0
IPB048N06LGATMA1 INFINEON/ 22+
INFINEON/
22+
12001
USD 0
IPB048N06LGATMA1 INFINEON TECHNOLOGIES AG 24+
INFINEON TECHNOLOGIES AG
24+
3000
USD 0
IPB048N06LGATMA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
1000
USD 0