Part Number: | IPB042N10N3GE8187ATMA1 |
Product Name: | IPB042N10N3GE8187ATMA1 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | IPB042N10N3GE8187ATMA1 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Infineon Technologies |
Description: | MOSFET N-CH 100V 100A TO263-3 |
Series: | OptiMOS |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 8410pF @ 50V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 214W (Tc) |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-3 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
IPB042N10N3GE8187ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB042N10N3GE8187ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB042N10N3GE8187ATMA1 Infineon 2022
Infineon
2022
10000
USD 0
IPB042N10N3GE8187ATMA1 Infineon 23/22+
Infineon
23/22+
5000
USD 0
IPB042N10N3GE8187ATMA1 INFINEON 22+
INFINEON
22+
32000
USD 0
IPB042N10N3GE8187ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB042N10N3GE8187ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB042N10N3GE8187ATMA1 Infineon 2022
Infineon
2022
10000
USD 0
IPB042N10N3GE8187ATMA1 Infineon 23/22+
Infineon
23/22+
5000
USD 0
IPB042N10N3GE8187ATMA1 INFINEON 22+
INFINEON
22+
32000
USD 0