| Part Number: | IPB027N10N5ATMA1 |
| Product Name: | IPB027N10N5ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPB027N10N5ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 100V 120A D2PAK-3 |
| Series: | OptiMOS |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Vgs(th) (Max) @ Id: | 3.8V @ 184µA |
| Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 10300pF @ 50V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 250W (Tc) |
| Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 100A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263-3 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
IPB027N10N5ATMA1 Infineon 22+23+
Infineon
22+23+
3000
USD 0
IPB027N10N5ATMA1 INFINEON 20+
INFINEON
20+
6998
USD 0
IPB027N10N5ATMA1 ORIGINAL 22+
ORIGINAL
22+
5418
USD 0
IPB027N10N5ATMA1 INFINEON 2022
INFINEON
2022
346000
USD 0
IPB027N10N5ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB027N10N5ATMA1 Infineon 22+23+
Infineon
22+23+
3000
USD 0
IPB027N10N5ATMA1 INFINEON 20+
INFINEON
20+
6998
USD 0
IPB027N10N5ATMA1 ORIGINAL 22+
ORIGINAL
22+
5418
USD 0
IPB027N10N5ATMA1 INFINEON 2022
INFINEON
2022
346000
USD 0
IPB027N10N5ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
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