| Part Number: | HN3C51FGR |
| Product Name: | HN3C51FGR Transistors - Bipolar (BJT) - Arrays |
| Merchant-Specific Identifier: | HN3C51FGR |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS 2NPN 120V 0.1A SM6 |
| Series: | - |
| Packaging: | |
| Transistor Type: | 2 NPN (Dual) |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 120V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
| Power - Max: | 300mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-74, SOT-457 |
| Supplier Device Package: | SM6 |
Part Number
Brand
D/C
Qty
HN3C51F-GR TOSHIBA
TOSHIBA
11800
USD 0
HN3C51F-GR TOSHIBA 07+
TOSHIBA
07+
2966
USD 0
HN3C51F-GR TOSHIBA 19+
TOSHIBA
19+
6000
USD 0
HN3C51F-GR(TE85L,F
1703
USD 0
HN3C51F-GR Tray
Tray
529
USD 0
HN3C51F-GR TOSHIBA
TOSHIBA
11800
USD 0
HN3C51F-GR TOSHIBA 07+
TOSHIBA
07+
2966
USD 0
HN3C51F-GR TOSHIBA 19+
TOSHIBA
19+
6000
USD 0
HN3C51F-GR(TE85L,F
1703
USD 0
HN3C51F-GR Tray
Tray
529
USD 0
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