Part Number: | HN3A51F |
Product Name: | HN3A51F Transistors - Bipolar (BJT) - Arrays |
Merchant-Specific Identifier: | HN3A51F |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS 2PNP 120V 0.1A SM6 |
Series: | - |
Packaging: | |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
Part Number
Brand
D/C
Qty
HN3A51F(TE85L,F) 22+
22+
6000
USD 0
HN3A51F TE85LF original new 21+
original new
21+
6036
USD 0
HN3A51F TE85L original new 21+
original new
21+
6036
USD 0
HN3A51F TOSHIBA 20+
TOSHIBA
20+
1436
USD 0
HN3A51F(TE85L,F) 22+
22+
6000
USD 0
HN3A51F TE85LF original new 21+
original new
21+
6036
USD 0
HN3A51F TE85L original new 21+
original new
21+
6036
USD 0
HN3A51F TOSHIBA 20+
TOSHIBA
20+
1436
USD 0