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Home > Part Number Index > Index 42 > Product (Page: 4260) > HN3A51F

What is HN3A51F?

Part Number: HN3A51F
Product Name: HN3A51F Transistors - Bipolar (BJT) - Arrays
Merchant-Specific Identifier: HN3A51F
Category: Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays
Brand: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 0.1A SM6
Series: -
Packaging:
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6
Rated 5/5 based on 16 customer reviews
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays

HN3A51F

This is a cached page collected on 6/23/2024 11:22:44 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
This is a cached page collected on 6/23/2024 11:22:44 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>

HN3A51F

1 - 10 of 10 Suppliers
Company

Part Number

Brand

D/C

Qty

HN3A51F(TE85L,F)

 

22+

6000
USD 0

HN3A51F TE85LF original new

original new 

21+

6036
USD 0

HN3A51F TE85L original new

original new 

21+

6036
USD 0

HN3A51F TOSHIBA

TOSHIBA 

20+

1436
USD 0

HN3A51F TOSHIBA

 

TOSHIBA 

0552+

1436
USD 0

HN3A51F(TE85L,F)

 

22+

6000
USD 0

HN3A51F TE85LF original new

original new 

21+

6036
USD 0

HN3A51F TE85L original new

original new 

21+

6036
USD 0

HN3A51F TOSHIBA

TOSHIBA 

20+

1436
USD 0

HN3A51F TOSHIBA

 

TOSHIBA 

0552+

1436
USD 0

This is a cached page collected on 6/23/2024 11:22:44 AM, to receive our suppliers' latest quotation, please click View Today's Offer >>
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