Part Number: | HN1C03FB |
Product Name: | HN1C03FB Transistors - Bipolar (BJT) - Arrays |
Merchant-Specific Identifier: | HN1C03FB |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS 2NPN 20V 0.3A SM6 |
Series: | - |
Packaging: | Cut Tape (CT) |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 300mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 3mA, 30mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 350 @ 4mA, 2V |
Power - Max: | 300mW |
Frequency - Transition: | 30MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
Part Number
Brand
D/C
Qty
HN1C03F-B TOSHBIA 20+
TOSHBIA
20+
100000
USD 0
HN1C03F-B TOSHIBA 09+
TOSHIBA
09+
3000
USD 0
HN1C03F-B(TE85L,F)
1078
USD 0
HN1C03F-B Bag
Bag
1729
USD 0
HN1C03F-B TOSHBIA 20+
TOSHBIA
20+
100000
USD 0
HN1C03F-B TOSHIBA 09+
TOSHIBA
09+
3000
USD 0
HN1C03F-B(TE85L,F)
1078
USD 0
HN1C03F-B Bag
Bag
1729
USD 0