| Part Number: | GPA030A135MNFDR |
| Product Name: | GPA030A135MNFDR Transistors - IGBTs - Single |
| Merchant-Specific Identifier: | GPA030A135MNFDR |
| Category: | Discrete Semiconductor Products > Transistors - IGBTs - Single |
| Brand: | Global Power Technologies Group |
| Description: | IGBT 1350V 60A 329W TO3PN |
| Series: | - |
| Packaging: | Tube |
| IGBT Type: | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max): | 1350V |
| Current - Collector (Ic) (Max): | 60A |
| Current - Collector Pulsed (Icm): | 90A |
| Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 30A |
| Power - Max: | 329W |
| Switching Energy: | 4.4mJ (on), 1.18mJ (off) |
| Input Type: | Standard |
| Gate Charge: | 300nC |
| Td (on/off) @ 25°C: | 30ns/145ns |
| Test Condition: | 600V, 30A, 5 Ohm, 15V |
| Reverse Recovery Time (trr): | 450ns |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-3 |
| Supplier Device Package: | TO-3PN |
Part Number
Brand
D/C
Qty
GPA030A135MN-FDR
40
USD 0
GPA030A135MN-FDR Global Power Technologies Group
Global Power Technologies Group
8000
USD 0
GPA030A135MN-FDR original new
original new
40
USD 0
GPA030A135MN-FDR SemiQ
SemiQ
5000
USD 0
GPA030A135MN-FDR
40
USD 0
GPA030A135MN-FDR
40
USD 0
GPA030A135MN-FDR Global Power Technologies Group
Global Power Technologies Group
8000
USD 0
GPA030A135MN-FDR original new
original new
40
USD 0
GPA030A135MN-FDR SemiQ
SemiQ
5000
USD 0
GPA030A135MN-FDR
40
USD 0
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