Part Number: | GP2M011A090NG |
Product Name: | GP2M011A090NG Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | GP2M011A090NG |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Global Power Technologies Group |
Description: | MOSFET N-CH 900V 11A TO3PN |
Series: | - |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3240pF @ 25V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 416W (Tc) |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 5.5A, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
Part Number
Brand
D/C
Qty
GP2M011A090NG Global Power Technologies Group
Global Power Technologies Group
1000
USD 0
GP2M011A090NG Global Power Technologies Group 21+
Global Power Technologies Group
21+
81630
USD 0
GP2M011A090NG Global Power Technologies Group 20+
Global Power Technologies Group
20+
18650
USD 0
GP2M011A090NG Global Power Technologies Group 21+
Global Power Technologies Group
21+
16000
USD 0
GP2M011A090NG Global Power Technologies Group
Global Power Technologies Group
0
USD 0
GP2M011A090NG Global Power Technologies Group
Global Power Technologies Group
1000
USD 0
GP2M011A090NG Global Power Technologies Group 21+
Global Power Technologies Group
21+
81630
USD 0
GP2M011A090NG Global Power Technologies Group 20+
Global Power Technologies Group
20+
18650
USD 0
GP2M011A090NG Global Power Technologies Group 21+
Global Power Technologies Group
21+
16000
USD 0
GP2M011A090NG Global Power Technologies Group
Global Power Technologies Group
0
USD 0