| Part Number: | GP1M010A080N |
| Product Name: | GP1M010A080N Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | GP1M010A080N |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Global Power Technologies Group |
| Description: | MOSFET N-CH 900V 10A TO3PN |
| Series: | - |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 900V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2336pF @ 25V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 312W (Tc) |
| Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 5A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3PN |
| Package / Case: | TO-3P-3, SC-65-3 |
Part Number
Brand
D/C
Qty
GP1M010A080N Global Power Technologies Group
Global Power Technologies Group
1000
USD 0
GP1M010A080N Global Power Technologies Group 21+
Global Power Technologies Group
21+
81630
USD 0
GP1M010A080N Global Power Technologies Group 20+
Global Power Technologies Group
20+
18650
USD 0
GP1M010A080N Global Power Technologies Group 21+
Global Power Technologies Group
21+
16000
USD 0
GP1M010A080N Global Power Technologies Group
Global Power Technologies Group
0
USD 0
GP1M010A080N Global Power Technologies Group
Global Power Technologies Group
1000
USD 0
GP1M010A080N Global Power Technologies Group 21+
Global Power Technologies Group
21+
81630
USD 0
GP1M010A080N Global Power Technologies Group 20+
Global Power Technologies Group
20+
18650
USD 0
GP1M010A080N Global Power Technologies Group 21+
Global Power Technologies Group
21+
16000
USD 0
GP1M010A080N Global Power Technologies Group
Global Power Technologies Group
0
USD 0
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