Part Number: | GP1M009A090N |
Product Name: | GP1M009A090N Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | GP1M009A090N |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | Global Power Technologies Group |
Description: | MOSFET N-CH 900V 9.5A TO3PN |
Series: | - |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2324pF @ 25V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 312W (Tc) |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 4.75A, 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
Part Number
Brand
D/C
Qty
GP1M009A090N 2020+
2020+
37500
USD 0
GP1M009A090N Global Power Technologies Group
Global Power Technologies Group
1000
USD 0
GP1M009A090N Global Power Technologies Group 21+
Global Power Technologies Group
21+
81630
USD 0
GP1M009A090N Global Power Technologies Group 20+
Global Power Technologies Group
20+
18650
USD 0
GP1M009A090N Global Power Technologies Group 21+
Global Power Technologies Group
21+
16000
USD 0
GP1M009A090N 2020+
2020+
37500
USD 0
GP1M009A090N Global Power Technologies Group
Global Power Technologies Group
1000
USD 0
GP1M009A090N Global Power Technologies Group 21+
Global Power Technologies Group
21+
81630
USD 0
GP1M009A090N Global Power Technologies Group 20+
Global Power Technologies Group
20+
18650
USD 0
GP1M009A090N Global Power Technologies Group 21+
Global Power Technologies Group
21+
16000
USD 0