Part Number: | GA10SICP12263 |
Product Name: | GA10SICP12263 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | GA10SICP12263 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | GeneSiC Semiconductor |
Description: | TRANS SJT 1200V 25A TO263-7 |
Series: | - |
Packaging: | Tube |
FET Type: | - |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1403pF @ 800V |
Vgs (Max): | 3.5V |
FET Feature: | - |
Power Dissipation (Max): | 170W (Tc) |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 10A |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK (7-Lead) |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Part Number
Brand
D/C
Qty
GA10SICP12-263 GeneSiC 23/22+
GeneSiC
23/22+
5000
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GA10SICP12-263 Genesic 22+
Genesic
22+
5000
USD 0
GA10SICP12-263 Genesic 23/22+
Genesic
23/22+
5000
USD 0
GA10SICP12-263 GeneSiC Semiconductor
GeneSiC Semiconductor
14000
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GA10SICP12-263 GeneSiC Semiconductor
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5000
USD 0
GA10SICP12-263 GeneSiC 23/22+
GeneSiC
23/22+
5000
USD 0
GA10SICP12-263 Genesic 22+
Genesic
22+
5000
USD 0
GA10SICP12-263 Genesic 23/22+
Genesic
23/22+
5000
USD 0
GA10SICP12-263 GeneSiC Semiconductor
GeneSiC Semiconductor
14000
USD 0
GA10SICP12-263 GeneSiC Semiconductor
GeneSiC Semiconductor
5000
USD 0