| Part Number: | FDN359BN |
| Product Name: | FDN359BN Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | FDN359BN |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Fairchild/ON Semiconductor |
| Description: | MOSFET N-CH 30V 2.7A 3SSOT |
| Series: | PowerTrench |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 15V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs: | 46 mOhm @ 2.7A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SuperSOT-3 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
FDN359BN ON 2038 0
ON
2038
3000
USD 0
FDN359BN ON 2019 0
ON
2019
18000
USD 0
FDN359BN ON 2027 0
ON
2027
39000
USD 0
FDN359BN ON 2018 0
ON
2018
9000
USD 0
FDN359BN 19/20+ 0
19/20+
50000
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
