| Part Number: | EPC8010ENGR |
| Product Name: | EPC8010ENGR Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | EPC8010ENGR |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | EPC |
| Description: | TRANS GAN 100V 2.7A BUMPED DIE |
| Series: | eGaN |
| Packaging: | Tray |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 0.48nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 55pF @ 50V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 500mA, 5V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | - |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
EPC8QI100 10+ 0
10+
2013
USD 0
EPC8QI100 ALTERA 22+ 0
ALTERA
22+
698
USD 0
EPC8QI100N ALTERA 22+ 0
ALTERA
22+
12
USD 0
Part Number
Brand
D/C
Qty
EPC8010ENGR EPC
EPC
1000
USD 0
EPC8010ENGR EPC
EPC
0
USD 0
EPC8010ENGR EPC
EPC
1000
USD 0
EPC8010ENGR EPC
EPC
0
USD 0
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