Part Number: | EPC8008ENGR |
Product Name: | EPC8008ENGR Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | EPC8008ENGR |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | EPC |
Description: | TRANS GAN 40V 2.7A BUMPED DIE |
Series: | eGaN |
Packaging: | Tray |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.18nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 20V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Rds On (Max) @ Id, Vgs: | 325 mOhm @ 500mA, 5V |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
Part Number
Brand
D/C
Qty
EPC8008ENGR EPC
EPC
1000
USD 0
EPC8008ENGR EPC 21+
EPC
21+
9762
USD 0
EPC8008ENGR EPC
EPC
1000
USD 0
EPC8008ENGR EPC 21+
EPC
21+
9762
USD 0
EPC8008ENGR EPC
EPC
0
USD 0
EPC8008ENGR EPC
EPC
1000
USD 0
EPC8008ENGR EPC 21+
EPC
21+
9762
USD 0
EPC8008ENGR EPC
EPC
1000
USD 0
EPC8008ENGR EPC 21+
EPC
21+
9762
USD 0
EPC8008ENGR EPC
EPC
0
USD 0