Part Number: | EPC8003ENGR |
Product Name: | EPC8003ENGR Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | EPC8003ENGR |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | EPC |
Description: | TRANS GAN 100V 2.5A BUMPED DIE |
Series: | eGaN |
Packaging: | Tray |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.32nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 38pF @ 50V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 500mA, 5V |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
EPC8QI100 10+ 0
10+
2013
USD 0
EPC8QI100 ALTERA 22+ 0
ALTERA
22+
698
USD 0
Part Number
Brand
D/C
Qty
EPC8003ENGR ALTERA 2020+
ALTERA
2020+
5000
USD 0
EPC8003ENGR EPC
EPC
1000
USD 0
EPC8003ENGR EPC
EPC
0
USD 0
EPC8003ENGR ALTERA 2020+
ALTERA
2020+
5000
USD 0
EPC8003ENGR EPC
EPC
1000
USD 0
EPC8003ENGR EPC
EPC
0
USD 0